** New publication 26th July, 2020**Schematics of a wrap round gate silicon nanowire field effect transistor of length 55 nm cut away to expose the channel region. The oxide thickness is 0.8 nm and the channel width is 2.2 nm. The channel length (gate length) is 15 nm, the source and drain extensions are 20 nm. The work function of the metal gate is 4.5 V. The projected image shows a typical non equillibrium Green function (NEGF) computed local density of states (LDOS) for the device assuming a drain bias of 0.6V and a gate bias at 0.6 V. The location of the first 1D sub band edge is shown along the central nanowire x axis as a function of energy and position (dashed white line); it mimics the self consistent potential along the same axis. In the projected image, the vertical energy scale is from -0.6 eV to 0.23 eV.

Quantum transport in a silicon nanowire FET transistor:

hot electrons and local power dissipation

ANTONIO MARTINEZ and JOHN R BARKER

Materials, **13** (15),3326-3367 (2020)

published on-line at: https://doi.org/10.3390/ma13153326

Open access: available on line

### Covid-19 outbreak Modelling (March 2020)

The data from the World Health organisation provides some help in understanding the spread of the disease. There are simple ways to analyse these data in an empirical spirit:

*Logistic function and complementary Fermi function for simple modelling of the COVID-19 pandemic: tutorial notes*, John R Barker, download here: logistic function COVID19

But there are words of caution in taking this too far:

*Why your COVD-19 exponential fits are wrong: words of caution and a lesson from catastrophe theory*, John R Barker: download here Words of caution

Research Page describes COVID-19 notes and research

**Public Lectures**:

12th February, 2019

** The Exploration of Space**: John R Barker

University of Glasgow Retired Staff Association, Glasgow

14th March, 2018

**The Exploration of Space: the Austerity Years: John R Barker
**Royal Philosophical Society of Glasgow,

John Anderson Building, Strathclyde University, 7.30 p.m.

**Recent Conference Papers**

**International Workshop on Computational Nanotechnology**

**5-9 June 2017, Low Wood Hotel, Windermere, UK
**

Image charge models for accurate construction of the electrostatic self-energy of 3D layered nanostructure devices

John R Barker and Antonio Martinez

Dissipative NEGF methodology to treat short range Coulomb

interaction: Current through a 1D Nanostructure

Antonio Martinez, John R Barker and Riccardo Di Pietro

**Euro-TMCS II: Theory, Modelling and Computational Methods for Semiconductors**, **Tyndall National Institute at** **University College, Cork, Republic of Ireland , 7-9 th December, 2016**

Impact of short range Coulomb repulsion on the current through a 1D nanostructure

Antonio Martinez, John R Barker, Riccardo Di Pietro

**UK Semiconductors Conference, University of Sheffield Hallam, July 2016**

Current enhancement due to short-range Coulomb interaction in Quasi-open Systems

A. Martinez , J.R. Barker, R. Pietro

**International Workshop on Computational Electronics,
**

**West Lafayette, Indiana, 2-4 September, 2015**

Impact of Discrete Dopants in Ultrascale FinFETs and the Effect of XC on Dopant Clustering

Antonio Martinez, Raul Valin and John R Barker

**UK Semiconductors Conference, University of Sheffield Hallam, July 2015**

Impact of local exchange-correlation in a FinFet device with dopant clustering

Antonio Martinez, Raul Valin and John R Barker

**Euro-TMCS I: Theory, Modelling and Computational Methods for Semiconductors**, **University of Granada, Spain , 28-30 January, 2015**

1. Effect of exchange-correlation in a FinFet device with dopant clustering

Antonio Martinez, Raul Valin and John R Barker

2. Impact of Fixed Oxide Charge on Ultra-scaled FinFets

Raul Valin, Antonio Martinez, Manuel Aldegnde and John R Barker

**ESSDERC 2014**

**44th European Solid-State Device Research Conference**

**September 22-26, 2014 – Venice, Italy**

Impact of Discrete Dopants on an Ultra-scaled

FinFET Using Quantum Transport Simulations

R. Valin, A. Martinez, and M. Aldegunde, J. R. Barker

**Semiconductors UK 2014 July 9-10, Sheffield**

Phonon scattering in ultra-scaled tri-gate FET

A. Martinez, R, Valin, M. Aldegunde, A. Price and J.R. Barker

**International Workshop on Computational Electronics**

**Paris, France 3-6 th June 2014**

1. Impact of Lateral Doping Profiles on Ultra-scaled Trigate FinFETs

R. Valin, M. Aldegunde, A. Martinez and J. R. Barker

2. TiN Work Function Variability on Ultra-scaled FinFETs using a NEGF formalism

R. Valin, A. García-Rivera, M. Aldegunde, A. Martinez, and J. R. Barker

3. Remote soft-optical phonon scattering in Si nanowire FETs

J. R. Barker and A. Martinez

**Theory, Modelling and Computational Methods for Semiconductors IV**

**University of Salford, UK 23-24 January, 2014**

1. Causal self-energies for NEGF modelling of quantum nanowires

John Barker, Antonio Martinez, Manuel Aldegunde and Raul Valin

2. Impact of different electron-phonon scattering models on the electron

transport in a quantum wire

Anna Price, Antonio Martinez, Raul Valin and John Barker

**UK Semiconductors Conference, Sheffield, July, 2013**

“Causal self-energies for quantum nanowires”

John R. Barker and Antonio Martinez

**International Workshop on Computational Electronics,**

** Nara, Japan, June, 2013**

**Short Course (Invited)**

“The Non-Equilibrium Green Function Approach to Quantum Transport in Nano-Structures” John R Barker

Download: Lecture Material

A few photos

A few photos

**Contributed Papers**

“Impact of Dielectric Induced Dynamical Many-Body Correlation Effects on the Transfer Characteristic of Si Nanowire Transistor”

A. Martinez, J.R. Barker, and M. Aldegunde

“Dependence of Matthiessen’s Rule on Complex Phonon Self-Energies: A NEGF Study”

M. Aldegunde, R. Valin, A. Martinez, and J.R. Barker

“Impact of Scaling on the Variability in Multigate Transistors”

M. Aldegunde, A. Martinez, and J.R. Barker

**Materials Research Society Spring Meeting San Francisco April (2013)**

“Self-energy Models for Scattering in Semiconductor Nanoscale Devices: Causality Considerations and the Spectral Sum Rule”

John R Barker, and Antonio Martinez.

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**Newsflash: observation of Surreal Bohmian trajectories 2016**

**Newsflash: breakthrough on observation of photon trajectories**

**International Workshop on Progress in Non-Equilibrium Green Functions IV**

**😆**

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