Green Functions

 

Selected publications

On the Impact of Different Phonon Scattering Mechanisms in
Gate-All-Around Silicon Nanowire Transistor: a NEGF study
M. ALDEGUNDE, A. MARTINEZ and J. R. BARKER
Journal of Applied Physics, vol. 113, issue 1 (2013)

Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
MARTINEZ, A.; ALDEGUNDE, M.; KALNA, K.; BARKER, J. R.
Proceedings Computational Electronics (IWCE), 2012 15th International Workshop on Computational Electronics
Digital Object Identifier: 10.1109/IWCE.2012.6242845
Publication Year: 2012 , Page(s): 1 – 4

Compliant energy and momentum conservation in NEGF simulation of electron-phonon scattering in semiconductor nano-wire transistors
J R BARKER, A MARTINEZ and M ALDEGUNDE
Journal of Physics: Conference Series, Vol. 367 012012 (2012)

Study of Discrete Doping Induced Variability in Junctionless Nanowire MOSFETs using Dissipative Quantum Transport Simulations
M. ALDEGUNDE, A. MARTINEZ and J. R. BARKER
IEEE Electron Device Letters, Vol. 33 194 (2012)

Quantum transport study on the impact of Channel Length and Cross-section on Variability induced by Random Discrete Dopants in narrow gate-all-around Silicon Nanowire Transistors,
A. MARTINEZ, N. SEOANE, M. ALDEGUNDE, A. R. BROWN,
J. R. BARKER  and A. ASENOV
IEEE Transactions on Electron Devices, Vol. 58, 2209-2217 (2011).

Conceptual issues, practicalities and applications of Bohmian and other quantum trajectories in nanoelectronics
J. R. BARKER
in Quantum Trajectories edited by Keith H. Hughes and Gerard Parlant, published by  Collaborative Computational Project on Molecular Quantum Dynamics (CCP6), Daresbury Laboratory, Daresbury, Warrington, UK; ISBN 978-0-9545289-9-7;pages
43-48 (2011).

Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants

MARTINEZ, M. ALDEGUNDE, N. SEOANE, A. R. BROWN, J. R. BARKER, A. ASENOV
IEEE Colloquium on Humanities, Science and Engineering Research (CHUSER 2011), Dec 5-6, 2011, Penang (2011)

The Non-Equilibrium Green Function approach as a TCAD tool for future CMOS technology
A. MARTINEZ, N. SEONE, M. ALDEGUNDE, A. ASENOV and J.R. BARKER
2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan, 8-10 September, 2011 Proc. SISPAD 2011, pages 95-98 IEEE Cat. No. (2011).

A new approach to modelling quantum distributions and quantum trajectories for density matrix and Green Function simulation of nano-devices
J. R. BARKER
J. Computational Electronics, Vol. 9, 243-251 (2010)

Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully 3D NEGF Simulation Study,
A. MARTINEZ, N. SEONE, A. R. BROWN, J. R. BARKER and A. ASENOV,
IEEE Transactions on Electron Devices, Vol. 57, 1626-1635 (2010)

Dopants and Roughness induced Resonances in thin Si Nanowire transistors: A self-consistent NEGF-Poisson study
A. MARTINEZ, N. SEOANE, A. BROWN, J.R. BARKER, and A. ASENOV
Progress in Nonequilibrium Green’s Functions IV, Journal of Physics: Conference Series Vol. 220, 012009 (2010)

3-D Non-Equilibrium Green’s Function Simulation of Non-Perturbative Scattering from Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor,
A. MARTINEZ, N. SEONE, A. R. BROWN, J. R. BARKER and A. ASENOV
IEEE Transactions on Nanotechnology, vol. 8, no. 5, 603-610 (2009)

Current variability in Si nanowire MOSFETS due to random dopants in the source/drain regions: a fully 3-D NEGF Simulation study
N. SEOANE, A. MARTINEZ, A.R. BROWN, J.R. BARKER, A. ASENOV
IEEE Transactions on Electron Devices,vol. 56, No.7, pp. 1388-1395 (2009).

Impact of Body Thickness Dependent Bandstructure on Scaling of Double Gate MOSFETs: a DFT/NEGF study
A. MARTINEZ, K.KALNA, P.V.SUSHKO, A.L. SCHLUGER, J.R. BARKER and A. ASENOV
IEEE Transactions on Nanotechnology, vol. 8, 159-166 (2009).

A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor,
A. MARTINEZ, M. BESCOND, A. R. BROWN, J. R. BARKER and A. ASENOV,
Journal of Computational Electronics, Vol.7, No.3, pp.359-362 (2008)

Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain
A MARTINEZ, J R BARKER, M BESCOND, A R BROWN and A ASENOV
Journal of Physics: Conference Series 109 012026 (2008)

NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs
K.KALNA , A. MARTINEZ, A. SVIZHENKO, M. P. AANATRAM, J. R. BARKER and A. ASENOV
J.Computational Electronics, 7 (3) 288-292 (2008)

Impact of Strain on Scaling of DG nanoMOSFETs using the NEGF Approach,
A. MARTINEZ, K. KALNA, J. R. BARKER, A. ASENOV,
Physica Status Sol.C-Current topics in Solid State Physics vol 5, No. 1 47-51 (2008).

Quantum transport in mesoscopic semiconductor devices: vortices, flows and atomistic effects
J.R. BARKER
AIP Conference Proceedings vol 995, Nuclei and Mesoscopic Physics, 104-115 (2008)

2D/3D NEGF modeling of the impact of random dopants /dopant aggregation in silicon nano-transistors,
J.R. BARKER
2008 International Conference on Simulation of Semiconductor Processes and Devices, Hakkone, Japan, 5-11 September, 2008 Proc. SISPAD 2008, IEEE Cat. No. CFP08SSD-PRT, 337-340, (2008)

Ab initio coherent scattering from discrete dopants in the source and drain of a nanowire transistor using 3D NEGF simulations
N. SEOANE, A. MARTINEZ, A. R. BROWN, J. R. BARKER AND A. ASENOV.
Proc. IEEE 2008 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, Honolulu, June 2008.

Simulation of impurities with an attractive potential in fully 3-D real-space Non-Equilibrium Green’s Function simulations
A. MARTINEZ, N. SEOANE, A. R. BROWN, J. R. BARKER and A. ASENOV
Proc. 2008 International Conference on Simulation of Semiconductor Processes and Devices, Hakkone, Japan, 5-11 September, 2008,Proc. SISPAD 2008, IEEE Cat. No. CFP08SSD-PRT, 341-344, (2008)

The 3D simulation of nanotransistors with non-equilibrium Greens Functions: effects of charge quantization and rough interfacial landscapes
J R BARKER
European Materials Research Society Conference, Strasbourg, 26-30 May, (2008). Quantum phase space distributions for non-equilibrium transport J R BARKER Proceedings of Conference on Frontiers of Quantum Thermodynamics and Mesoscopic systems , Prague, 28-July-2nd August, (2008)

A self-consistent full 3-D real space NEGF simulator for studying nonperturbative effects in nano-Mosfets
A. MARTINEZ, M. BESCOND, J.R. BARKER, A. SVIZHENKO, M. P. ANATRAM,C. Millar and A. ASENOV
IEEE Transactions Electron Devices,54, 2213-2222 (2007)

The impact of random dopant aggregation in source and drain on the performance of ballistic DG nano-MOSFETs : a NEGF study.
A. MARTINEZ, J. R. BARKER, A. SVIZHENKO, M. P. ANANTRAM, and A. ASENOV
IEEE Transactions on Nanotechnology:6, 438-445 (2007)

Impact of Body Thickness Dependent Bandstructure on Scaling of Double Gate MOSFETs: a DFT/NEGF study
A. Martinez, K. Kalna, P. V. Sushko, A. L. Shluger, J. R. Barker and A. Asenov
in Proceedings of 2007 Silicon Nanoelectronics Workshop, ed. by B.-G. Park and H. Mizuta (Kyoto, Japan) 21-22, (2007).

Impact of Strain on the Ultimate Scaling of Double Gate MOSFETs using a Non-Equilibrium Green Functions Approach ,
A. Martinez, K. Kalna, A. Svizhenko, J. R. Barker and A. Asenov
Proceeding of the 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 15) (Hongo Campus, University of Tokyo, Tokyo, Japan, 23-27 July, 2007), 128.(2007)

A study of the interface roughness effect in Si-nanowires using a full 3D NEGF approach
A. MARTINEZ, K. KALNA, J.R. BARKER AND A. ASENOV
Physica E : 37, 168-172, (2007)

On the Impact of High-k Gate Stacks on Mobility: A Monte Carlo Study Including Coupled SO Phonon-plasmon Scattering
G. FERRARI, J. R. WATLING, S. ROY, J. R. BARKER, P. ZEITZOFF, G. BERSUKER AND A. ASENOV
J. Comput. Electron: 6, 1-5 (2007).

Developing a full 3D NEGF simulator with random dopant and interface roughness
A. Martinez,J. R. BARKER, A.Asenov, Svizhenko and M.P. Anatram
J.Comput. Electron 6: 215-218 (2007).

Development of a full 3D NEGF nan-CMOS simulator
A. Martinez,J. R. BARKER, A.Asenov, M. Bescond, Svizhenko and A. Anatram
Proc.SISPAD 2006 (IEEE) 353-356 (2006).

A 2D-NEGF quantum transport study of unintentional charges in a 5nm-DG transistor
MARTINEZ, A., BARKER, J.R., SVIZHENKO, A., ANANTRAM, M.P., AND ASENOV, A.,
Springer Proceedings in Physics, 110 (August 15th ) (2006)

Atomistic scattering close to an interface
BARKER, J.R., AND WATLING, J.R.,
Journal of Physics Conf series 38 204-207 (2006)

Green Function study of quantum transport In ultrasmall devices with embedded atomistic clusters
BARKER, J.R., MARTINEZ, A., SVIZHENKO, A., AANATRAM, M.P., AND ASENOV, A.,
J. Phys.: Conf. Ser. 35 233-246 (2006).

A NEGF study of the effect of surface roughness on CMOS nanotransistors
MARTINEZ, A., SVIZHENKO, A., AANATRAM, M.P., BARKER, J.R., AND ASENOV, A.,
J. Phys.: Conf. Ser. 35 269-274 (2006)

Quantised Vortex Flows And Conductance Fluctuations In High Temperature Atomistic Silicon MOSFET Devices
J. R. BARKER
Physics of Semiconductor, ed J. Menedez and C.G. Van de Walle, AIP Press, 27 1493 (2005)

Vortex flows in semiconductor device quantum channels: time-dependent simulation
J.R. BARKER AND A. MARTINEZ
J. Computational Electronics, 3, 401-405, (2004)

Quantum fluctuations in atomistic semiconductor devices
J. R. BARKER
Superlattices and Microstructures 34, 361-366 (2004).

Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged atomistic impurity scattering
J. R. BARKER
Semiconductor Science and Technology, 19S, p56-59, (2004).

A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions
J.R. BARKER
Physica E19, 62-70 (2003)

Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices
J.R. BARKER
Journal of Computational Electronics 2, 153-161 (2003)

Quantum hydrodynamics of normal vortices in open semiconductor quantum dots
J.R. BARKER
Physics of Semiconductors: Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002, Institute of Physics Conference Series 171, ed A R Long and J H Davies, Institute of Physics Publishing, Bristol (UK) and Philadelphia (USA), P231 (2003)

Bohm trajectories in quantum transport
J.R. BARKER
Chapter in “Progress in Nonequilibrium Green’s Functions II”, M. Bonitz and D. Semkat (eds.), World Scientific Publ., Singapore, 198-213 (2003)

Normal vortex states and their application in mesoscopic semiconductor devices
J.R. BARKER
Microelectronic Engineering 63 223-231 (2002)

On the Completeness of Quantum Hydrodynamics: Vortex Formation and the Need for Both Vector and Scalar Quantum Potentials in Device Simulation
J.R. BARKER
Journal of Computational Electronics 1 17-21 (2002)

A simple model for the quantum hydrodynamic simulation of electron transport in quantum confined structures in the presence of vortices
J.R. BARKER
VLSI Design 13 237-244 (2001)

 

 

 

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