Keldysh Green Functions

 

Selected publications

Impact of Phonon scattering in Si /GaAs /InGaAs Nanowires and FinFets: a NEGF perspective
ANTONIO MARTINEZ, ANNA PRICE, RAUL VALIN, MANUEL ALDEGUNDE AND JOHN BARKER
Journal of Computational Electronics,Volume 15, Issue 4, pp 1130–1147 (2016)
Review paper Published on line at http://link.springer.com/article/10.1007/s10825-016-0851-0

Current enhancement due to short-range Coulomb interaction in Quasi-open Systems
A. MARTINEZ, J.R. BARKER, R. PIETRO
Semiconductors UK 2016, Book of Abstracts (2016)

Impact of short range Coulomb repulsion on the current through a 1D nanostructure
ANTONIO MARTINEZ, JOHN R. BARKER, RICCARDO PIETRO
Euro-TMCS II: Theory, Modelling and Computational Methods for Semiconductors, Tyndall National Institute at University College, Cork, Republic of Ireland , 7-9 th December, 2016, Book of Abstracts.

Non-equilibrium Green’s functions study of discrete dopants
variability on an ultra-scaled FinFET
R. VALIN, A. MARTINEZ, and J. R. BARKER
Journal of Applied Physics, 117, 16405 (2015)

Study of Local Power Dissipation in Ultra-Scaled Silicon Nanowire FETs
ANTONIO MARTINEZ, JOHN R. BARKER, MANUEL ALDEGUNDE AND RAUL VALIN
IEEE Electron Device Letters, 36 2-4 (2015)

Impact of local exchange- correlation in a FinFet device with dopant clustering
A. MARTINEZ, R. VALIN and J. R. BARKER
Semiconductors UK 2015, Book of Abstracts (2015)

Impact of discrete dopants in ultra-scaled finfets and the effect of XC on dopant clustering
A. MARTINEZ, R. VALIN and J. R. BARKER
IEEE Conference Publication, Computational Electronics (IWCE), 2015 International Workshop: Year 2015
pages 1-4, DOI: 10.1109/IWCE.2015.7301974
IEEE Xplore

Quantum Transport of a Nanowire FET with Complex Phonon Self–Energy
R. VALIN, M. ALDEGUNDE, A. MARTINEZ, and J. R. BARKER
Journal of Applied Physics, 116, 084507 (2014)

Impact of Discrete Dopants on an Ultra-scaled
FinFET Using Quantum Transport Simulations
R. VALIN, A. MARTINEZ, and M. ALDEGUNDE, J. R. BARKER
Proceedings IEEE Solid State Devices Research Conference (ESSDERC) , 2014 44th European, Curran Associates, Inc. ( ISBN:9781479943753, Dec 2014 ), pp 345-348 (2014)
also on-line in IEEE Xplore.

Impact of Lateral Doping Profiles on Ultra-scaled Trigate FinFETs
RAUL VALIN, MANUEL ALDEGUNDE, ANTONIO MARTINEZ, and JOHN. R. BARKER
IEEE Proceedings of International Workshop on Computational Electronics
2014 International Workshop on Computational Electronics (IWCE 2014)
Curran Associates (ISBN:9781479954346), 218-220 (2014)
also on-line in IEEE Xplore

Remote soft-optical phonon scattering in Si nanowire FETs
JOHN. R. BARKER and A. MARTINEZ
IEEE Proceedings of International Workshop on Computational Electronics
2014 International Workshop on Computational Electronics (IWCE 2014)
Curran Associates (ISBN:9781479954346), 143-145 (2014)
Also on-line in IEEE Xplore DOI: 10.1109/IWCE.2014.6865851

Phonon scattering in an Ultra-scaled Trigate FET
A. MARTINEZ, R. VALIN, M. ALDEGUNDE and J. R. BARKER
Semiconductors UK 2014, Book of Abstracts (2014)

Causal self-energies for NEGF modelling of quantum nano wires
JOHN R. BARKER, ANTONIO MARTINEZ, MANUEL ALDEGUNDE AND RAUL VALIN
Journal of Physics: Conference Series 526 012001 (2014)

Impact of different electron-phonon scattering models on the electron
transport in a quantum wire
ANNA PRICE, ANTONIO MARTINEZ, RAUL VALIN AND JOHN BARKER
Journal of Physics: Conference Series 526, 012007 (2014)

Study of individual phonon scattering mechanisms and the validity
of Matthiessen’s rule in a gate-all-around silicon nanowire transistor
M. ALDEGUNDE, A. MARTINEZ and J. R. BARKER
Journal of Applied Physics, vol. 113, 014501 (2013)

Self-energy Models for Scattering in Semiconductor Nanoscale Devices: Causality Considerations and the Spectral Sum Rule
JOHN R BARKER, and ANTONIO MARTINEZ
Material Research Society Proceedings, MRS Online Proceedings Library, 1551, mrss13-1551-r10-25 doi:10.1557/opl.2013.898.(2013)

Causal self-energies for quantum nanowires
JOHN BARKER and ANTONIO MARTINEZ
UK Semiconductors 2013, Book of Abstracts (2013)

The non-equilibrium Green function approach to quantum transport in nano-structures
J.R. BARKER
Int. Workshop on Computational Electronics 16, (ed N. Mori and S. Selberherr, 2013 Society for Micro-and Nanoelectronics, Technische Univeritat Wien:ISBN 978-3-901578-26-7) 16 (2013)

Impact of Dielectric Induced Dynamical Many-body correlation effects on the transfer characteristic of a silicon nanowire transistor
A. MARTINEZ, J.R.BARKER and M. ALDEGUNDE
Int. Workshop on Computational Electronics 16, (ed N. Mori and S. Selberherr, 2013 Society for Micro-and Nanoelectronics, Technische Univeritat Wien:ISBN 978-3-901578-26-7) 50 (2013)

Impact of Scaling on the Variability of Multi-Gate Transistors
M. ALDEGUNDE, A. MARTINEZ and J.R.BARKER
Int. Workshop on Computational Electronics 16, (ed N. Mori and S. Selberherr, 2013 Society for Micro-and Nanoelectronics, Technische Univeritat Wien:ISBN 978-3-901578-26-7) 194 (2013)

Dependence of Matthieson’s Rule on Complex Phonon Self-Energies: a NEGF study
M. ALDEGUNDE, R. VALIN, A. MARTINEZ and J.R. BARKER
Int. Workshop on Computational Electronics 16, (ed N. Mori and S. Selberherr, 2013 Society for Micro-and Nanoelectronics, Technische Univeritat Wien:ISBN 978-3-901578-26-7) 220 (2013)

On the Impact of Different Phonon Scattering Mechanisms in
Gate-All-Around Silicon Nanowire Transistor: a NEGF study
M. ALDEGUNDE, A. MARTINEZ and J. R. BARKER
Journal of Applied Physics, vol. 113, issue 1 (2013)

Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
MARTINEZ, A.; ALDEGUNDE, M.; KALNA, K.; BARKER, J. R.
Proceedings Computational Electronics (IWCE), 2012 15th International Workshop on Computational Electronics
Digital Object Identifier: 10.1109/IWCE.2012.6242845
Publication Year: 2012 , Page(s): 1 – 4

Compliant energy and momentum conservation in NEGF simulation of electron-phonon scattering in semiconductor nano-wire transistors
J R BARKER, A MARTINEZ and M ALDEGUNDE
Journal of Physics: Conference Series, Vol. 367 012012 (2012)

Study of Discrete Doping Induced Variability in Junctionless Nanowire MOSFETs using Dissipative Quantum Transport Simulations
M. ALDEGUNDE, A. MARTINEZ and J. R. BARKER
IEEE Electron Device Letters, Vol. 33 194 (2012)

Quantum transport study on the impact of Channel Length and Cross-section on Variability induced by Random Discrete Dopants in narrow gate-all-around Silicon Nanowire Transistors,
A. MARTINEZ, N. SEOANE, M. ALDEGUNDE, A. R. BROWN,
J. R. BARKER  and A. ASENOV
IEEE Transactions on Electron Devices, Vol. 58, 2209-2217 (2011).

Conceptual issues, practicalities and applications of Bohmian and other quantum trajectories in nanoelectronics
J. R. BARKER
in Quantum Trajectories edited by Keith H. Hughes and Gerard Parlant, published by  Collaborative Computational Project on Molecular Quantum Dynamics (CCP6), Daresbury Laboratory, Daresbury, Warrington, UK; ISBN 978-0-9545289-9-7;pages
43-48 (2011).

Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants

MARTINEZ, M. ALDEGUNDE, N. SEOANE, A. R. BROWN, J. R. BARKER, A. ASENOV
IEEE Colloquium on Humanities, Science and Engineering Research (CHUSER 2011), Dec 5-6, 2011, Penang (2011)

The Non-Equilibrium Green Function approach as a TCAD tool for future CMOS technology
A. MARTINEZ, N. SEONE, M. ALDEGUNDE, A. ASENOV and J.R. BARKER
2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan, 8-10 September, 2011 Proc. SISPAD 2011, pages 95-98 IEEE Cat. No. (2011).

A new approach to modelling quantum distributions and quantum trajectories for density matrix and Green Function simulation of nano-devices
J. R. BARKER
J. Computational Electronics, Vol. 9, 243-251 (2010)

Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully 3D NEGF Simulation Study,
A. MARTINEZ, N. SEONE, A. R. BROWN, J. R. BARKER and A. ASENOV,
IEEE Transactions on Electron Devices, Vol. 57, 1626-1635 (2010)

Dopants and Roughness induced Resonances in thin Si Nanowire transistors: A self-consistent NEGF-Poisson study
A. MARTINEZ, N. SEOANE, A. BROWN, J.R. BARKER, and A. ASENOV
Progress in Nonequilibrium Green’s Functions IV, Journal of Physics: Conference Series Vol. 220, 012009 (2010)

3-D Non-Equilibrium Green’s Function Simulation of Non-Perturbative Scattering from Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor,
A. MARTINEZ, N. SEONE, A. R. BROWN, J. R. BARKER and A. ASENOV
IEEE Transactions on Nanotechnology, vol. 8, no. 5, 603-610 (2009)

Current variability in Si nanowire MOSFETS due to random dopants in the source/drain regions: a fully 3-D NEGF Simulation study
N. SEOANE, A. MARTINEZ, A.R. BROWN, J.R. BARKER, A. ASENOV
IEEE Transactions on Electron Devices,vol. 56, No.7, pp. 1388-1395 (2009).

Impact of Body Thickness Dependent Bandstructure on Scaling of Double Gate MOSFETs: a DFT/NEGF study
A. MARTINEZ, K.KALNA, P.V.SUSHKO, A.L. SCHLUGER, J.R. BARKER and A. ASENOV
IEEE Transactions on Nanotechnology, vol. 8, 159-166 (2009).

A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor,
A. MARTINEZ, M. BESCOND, A. R. BROWN, J. R. BARKER and A. ASENOV,
Journal of Computational Electronics, Vol.7, No.3, pp.359-362 (2008)

Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain
A MARTINEZ, J R BARKER, M BESCOND, A R BROWN and A ASENOV
Journal of Physics: Conference Series 109 012026 (2008)

NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs
K.KALNA , A. MARTINEZ, A. SVIZHENKO, M. P. AANATRAM, J. R. BARKER and A. ASENOV
J.Computational Electronics, 7 (3) 288-292 (2008)

Impact of Strain on Scaling of DG nanoMOSFETs using the NEGF Approach,
A. MARTINEZ, K. KALNA, J. R. BARKER, A. ASENOV,
Physica Status Sol.C-Current topics in Solid State Physics vol 5, No. 1 47-51 (2008).

Quantum transport in mesoscopic semiconductor devices: vortices, flows and atomistic effects
J.R. BARKER
AIP Conference Proceedings vol 995, Nuclei and Mesoscopic Physics, 104-115 (2008)

2D/3D NEGF modeling of the impact of random dopants /dopant aggregation in silicon nano-transistors,
J.R. BARKER
2008 International Conference on Simulation of Semiconductor Processes and Devices, Hakkone, Japan, 5-11 September, 2008 Proc. SISPAD 2008, IEEE Cat. No. CFP08SSD-PRT, 337-340, (2008)

Ab initio coherent scattering from discrete dopants in the source and drain of a nanowire transistor using 3D NEGF simulations
N. SEOANE, A. MARTINEZ, A. R. BROWN, J. R. BARKER AND A. ASENOV.
Proc. IEEE 2008 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, Honolulu, June 2008.

Simulation of impurities with an attractive potential in fully 3-D real-space Non-Equilibrium Green’s Function simulations
A. MARTINEZ, N. SEOANE, A. R. BROWN, J. R. BARKER and A. ASENOV
Proc. 2008 International Conference on Simulation of Semiconductor Processes and Devices, Hakkone, Japan, 5-11 September, 2008,Proc. SISPAD 2008, IEEE Cat. No. CFP08SSD-PRT, 341-344, (2008)

The 3D simulation of nanotransistors with non-equilibrium Greens Functions: effects of charge quantization and rough interfacial landscapes
J R BARKER
European Materials Research Society Conference, Strasbourg, 26-30 May, (2008). Quantum phase space distributions for non-equilibrium transport J R BARKER Proceedings of Conference on Frontiers of Quantum Thermodynamics and Mesoscopic systems , Prague, 28-July-2nd August, (2008)

A self-consistent full 3-D real space NEGF simulator for studying nonperturbative effects in nano-Mosfets
A. MARTINEZ, M. BESCOND, J.R. BARKER, A. SVIZHENKO, M. P. ANATRAM,C. Millar and A. ASENOV
IEEE Transactions Electron Devices,54, 2213-2222 (2007)

The impact of random dopant aggregation in source and drain on the performance of ballistic DG nano-MOSFETs : a NEGF study.
A. MARTINEZ, J. R. BARKER, A. SVIZHENKO, M. P. ANANTRAM, and A. ASENOV
IEEE Transactions on Nanotechnology:6, 438-445 (2007)

Impact of Body Thickness Dependent Bandstructure on Scaling of Double Gate MOSFETs: a DFT/NEGF study
A. Martinez, K. Kalna, P. V. Sushko, A. L. Shluger, J. R. Barker and A. Asenov
in Proceedings of 2007 Silicon Nanoelectronics Workshop, ed. by B.-G. Park and H. Mizuta (Kyoto, Japan) 21-22, (2007).

Impact of Strain on the Ultimate Scaling of Double Gate MOSFETs using a Non-Equilibrium Green Functions Approach ,
A. Martinez, K. Kalna, A. Svizhenko, J. R. Barker and A. Asenov
Proceeding of the 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 15) (Hongo Campus, University of Tokyo, Tokyo, Japan, 23-27 July, 2007), 128.(2007)

A study of the interface roughness effect in Si-nanowires using a full 3D NEGF approach
A. MARTINEZ, K. KALNA, J.R. BARKER AND A. ASENOV
Physica E : 37, 168-172, (2007)

On the Impact of High-k Gate Stacks on Mobility: A Monte Carlo Study Including Coupled SO Phonon-plasmon Scattering
G. FERRARI, J. R. WATLING, S. ROY, J. R. BARKER, P. ZEITZOFF, G. BERSUKER AND A. ASENOV
J. Comput. Electron: 6, 1-5 (2007).

Developing a full 3D NEGF simulator with random dopant and interface roughness
A. Martinez,J. R. BARKER, A.Asenov, Svizhenko and M.P. Anatram
J.Comput. Electron 6: 215-218 (2007).

Development of a full 3D NEGF nan-CMOS simulator
A. Martinez,J. R. BARKER, A.Asenov, M. Bescond, Svizhenko and A. Anatram
Proc.SISPAD 2006 (IEEE) 353-356 (2006).

A 2D-NEGF quantum transport study of unintentional charges in a 5nm-DG transistor
MARTINEZ, A., BARKER, J.R., SVIZHENKO, A., ANANTRAM, M.P., AND ASENOV, A.,
Springer Proceedings in Physics, 110 (August 15th ) (2006)

Atomistic scattering close to an interface
BARKER, J.R., AND WATLING, J.R.,
Journal of Physics Conf series 38 204-207 (2006)

Green Function study of quantum transport In ultrasmall devices with embedded atomistic clusters
BARKER, J.R., MARTINEZ, A., SVIZHENKO, A., AANATRAM, M.P., AND ASENOV, A.,
J. Phys.: Conf. Ser. 35 233-246 (2006).

A NEGF study of the effect of surface roughness on CMOS nanotransistors
MARTINEZ, A., SVIZHENKO, A., AANATRAM, M.P., BARKER, J.R., AND ASENOV, A.,
J. Phys.: Conf. Ser. 35 269-274 (2006)

Quantised Vortex Flows And Conductance Fluctuations In High Temperature Atomistic Silicon MOSFET Devices
J. R. BARKER
Physics of Semiconductor, ed J. Menedez and C.G. Van de Walle, AIP Press, 27 1493 (2005)

Vortex flows in semiconductor device quantum channels: time-dependent simulation
J.R. BARKER AND A. MARTINEZ
J. Computational Electronics, 3, 401-405, (2004)

Quantum fluctuations in atomistic semiconductor devices
J. R. BARKER
Superlattices and Microstructures 34, 361-366 (2004).

Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged atomistic impurity scattering
J. R. BARKER
Semiconductor Science and Technology, 19S, p56-59, (2004).

A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions
J.R. BARKER
Physica E19, 62-70 (2003)

Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices
J.R. BARKER
Journal of Computational Electronics 2, 153-161 (2003)

Quantum hydrodynamics of normal vortices in open semiconductor quantum dots
J.R. BARKER
Physics of Semiconductors: Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002, Institute of Physics Conference Series 171, ed A R Long and J H Davies, Institute of Physics Publishing, Bristol (UK) and Philadelphia (USA), P231 (2003)

Bohm trajectories in quantum transport
J.R. BARKER
Chapter in “Progress in Nonequilibrium Green’s Functions II”, M. Bonitz and D. Semkat (eds.), World Scientific Publ., Singapore, 198-213 (2003)

Normal vortex states and their application in mesoscopic semiconductor devices
J.R. BARKER
Microelectronic Engineering 63 223-231 (2002)

On the Completeness of Quantum Hydrodynamics: Vortex Formation and the Need for Both Vector and Scalar Quantum Potentials in Device Simulation
J.R. BARKER
Journal of Computational Electronics 1 17-21 (2002)

A simple model for the quantum hydrodynamic simulation of electron transport in quantum confined structures in the presence of vortices
J.R. BARKER
VLSI Design 13 237-244 (2001)

 

 

 

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