2001-2010

 

A new approach to modelling quantum distributions and quantum trajectories for density matrix and Green Function simulation of nano-devices
J. R. BARKER
J. Computational Electronics, Vol. 9, 243-251 (2010)

Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully 3D NEGF Simulation Study,
A. MARTINEZ, N. SEONE, A. R. BROWN, J. R. BARKER and A. ASENOV,
IEEE Transactions on Electron Devices, Vol. 57, 1626-1635 (2010)

Quantum phase space distributions with compact support
J.R. BARKER
Physica E 42, 491-496 (2010).

Dopants and Roughness induced Resonances in thin Si Nanowire transistors: A self-consistent NEGF-Poisson study
A. MARTINEZ, N. SEOANE, A. BROWN, J. BARKER, and A. ASENOV
Progress in Nonequilibrium Green’s Functions IV, Journal of Physics: Conference Series Vol. 220, 012009 (2010)

2009
3-D Non-Equilibrium Green’s Function Simulation of Non-Perturbative Scattering from Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor,
A. MARTINEZ, N. SEONE, A. R. BROWN, J. R. BARKER and A. ASENOV
IEEE Transactions on Nanotechnology, vol. 8, no. 5, 603-610 (2009)

Current variability in Si nanowire MOSFETS due to random dopants in the source/drain regions: a fully 3-D NEGF Simulation study
N. SEOANE, A. MARTINEZ, A.R. BROWN, J.R. BARKER, A. ASENOV
IEEE Transactions on Electron Devices,vol. 56, No.7, pp. 1388-1395 (2009).

Impact of Body Thickness Dependent Bandstructure on Scaling of Double Gate MOSFETs: a DFT/NEGF study
A. MARTINEZ, K.KALNA, P.V.SUSHKO, A.L. SCHLUGER, J.R. BARKER and A. ASENOV
IEEE Transactions on Nanotechnology, vol. 8, 159-166 (2009).

2008

 

Ballistic Quantum Simulators for Studying Variability in Nanotransistors
A. MARTINEZ, J.R. BARKER, A. SVIZHENKO, M.P. ANANTRAM,  M. BESCOND, A. ASENOV.
Journal of Computational and Theoretical Nanoscience, Volume 5,  2289-2310 (2008)

A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor,
A. MARTINEZ, M. BESCOND, A. R. BROWN, J. R. BARKER and A. ASENOV,
Journal of Computational Electronics, Vol.7, No.3, pp.359-362 (2008)

Impact of High-K Gate Stacks on Transport and Variability in Nano-CMOS Devices,
J. R. WATLING, A. R. BROWN, G. FERRARI, J. R. BARKER, G. BERSUKER, P. ZEITSOFF and A. ASENOV,
J. Computational and Theoretical Nanoscience, Vol.5, pp.1072-1088 (2008)

The influence of polarisation and image charges on electron- impurity scattering in high degeneracy, nanometre scale silicon wrap-round gate MOSFETs
J R BARKER, E TOWIE and J R WATLING
Journal of Physics: Conference Series 109, 012009 (2008)

Performance variability in wrap-round gate silicon nano-transistors: a 3D self-consistent NEGF study of ballistic flows for atomistically-resolved source and drain
A MARTINEZ, J R BARKER, M BESCOND, A R BROWN and A ASENOV
Journal of Physics: Conference Series 109, 012026 (2008)

NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs
K.KALNA , A. MARTINEZ, A. SVIZHENKO, M. P. AANATRAM, J. R. BARKER and A. ASENOV
J.Computational Electronics, 7 (3), 288-292 (2008)

Impact of Strain on Scaling of DG nanoMOSFETs using the NEGF Approach,
A. MARTINEZ, K. KALNA, J. R. BARKER, A. ASENOV,
Physica Status Sol.C-Current topics in Solid State Physics vol 5, No. 1 47-51 (2008).

Quantum transport in mesoscopic semiconductor devices: vortices, flows and atomistic effects
J.R. BARKER
AIP Conference Proceedings vol 995, Nuclei and Mesoscopic Physics, 104-115 (2008)

2D/3D NEGF modeling of the impact of random dopants /dopant aggregation in silicon nano-transistors,
J.R. BARKER
2008 International Conference on Simulation of Semiconductor Processes and Devices, Hakkone, Japan, 5-11 September, 2008 Proc. SISPAD 2008, IEEE Cat. No. CFP08SSD-PRT, 337-340, (2008)

Ab initio coherent scattering from discrete dopants in the source and drain of a nanowire transistor using 3D NEGF simulations
N. SEOANE, A. MARTINEZ, A. R. BROWN, J. R. BARKER AND A. ASENOV.
Proc. IEEE 2008 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, Honolulu, June 2008.

Simulation of impurities with an attractive potential in fully 3-D real-space Non-Equilibrium Green’s Function simulations
A. MARTINEZ, N. SEOANE, A. R. BROWN, J. R. BARKER and A. ASENOV
IEEE Conference Publications, International Conference on Simulation of Semiconductor Processes and Devices, Hakkone, Japan, 5-11 September, 2008, Proc. SISPAD 2008, IEEE Cat. No. CFP08SSD-PRT, 341-344, (2008)
DOI: 10.1109/SISPAD.2008.4648307

Self-Organizing smart dust sensors for planetary exploration,
J R BARKER AND F RODRIGUEZ-SALAZAR
Workshop on Swarm intelligence part of Nanonets 2008 Conference Boston, Ma, USA, 14-16 September, (2008).

The 3D simulation of nanotransistors with non-equilibrium Greens Functions: effects of charge quantization and rough interfacial landscapes
J R BARKER
European Materials Research Society Conference, Strasbourg, 26-30 May, (2008). Quantum phase space distributions for non-equilibrium transport J R BARKER Proceedings of Conference on Frontiers of Quantum Thermodynamics and Mesoscopic systems , Prague, 28-July-2nd August, (2008)

2007
A self-consistent full 3-D real space NEGF simulator for studying nonperturbative effects in nano-Mosfets
A. MARTINEZ, M. BESCOND, J.R. BARKER, A. SVIZHENKO, M. P. ANANTRAM,C. Millar and A. ASENOV
IEEE Transactions Electron Devices,54, 2213-2222 (2007)

Beyond SiO2 technology: The impact of high-k dielectrics
G. FERRARI, J. R. WATLING, S. ROY, J. R. BARKER AND A. ASENOV
Journal of Non-Crystalline Solids, vol. 353, 630-634 (2007).

The impact of random dopant aggregation in source and drain on the performance of ballistic DG nano-MOSFETs : a NEGF study.
A. MARTINEZ, J. R. BARKER, A. SVIZHENKO, M. P. ANANTRAM, and A. ASENOV
IEEE Transactions on Nanotechnology:6, 438-445 (2007)

Impact of Body Thickness Dependent Bandstructure on Scaling of Double Gate MOSFETs:
a DFT/NEGF study
A. MARTINEZ, K. KALNA, P. V. SUSHKO, A. L. SHLUGER, J. R. BARKER and A. ASENOV
in Proceedings of 2007 Silicon Nanoelectronics Workshop, ed. by B.-G. Park and H. Mizuta (Kyoto, Japan) 21-22, (2007).

Impact of Strain on the Ultimate Scaling of Double Gate MOSFETs using a Non-Equilibrium Green Functions Approach ,
A. MARTINEZ, K. KALNA, A. SVIZHENKO, J. R. BARKER and A. ASENOV
Proceeding of the 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 15) (Hongo Campus, University of Tokyo, Tokyo, Japan, 23-27 July, 2007), 128.(2007)

A study of the interface roughness effect in Si-nanowires using a full 3D NEGF approach
A. MARTINEZ, K. KALNA, J.R. BARKER AND A. ASENOV
Physica E : 37, 168-172, (2007)

On the Impact of High-k Gate Stacks on Mobility: A Monte Carlo Study Including Coupled SO Phonon-plasmon Scattering
G. FERRARI, J. R. WATLING, S. ROY, J. R. BARKER, P. ZEITZOFF, G. BERSUKER AND A. ASENOV
J. Comput. Electron: 6, 1-5 (2007).

Developing a full 3D NEGF simulator with random dopant and interface roughness
A. MARTINEZ, J. R. BARKER, A. ASENOV, SVIZHENKO and M.P. ANANTRAM
J.Comput. Electron 6: 215-218 (2007).

Model plasma dispersion functions for SO phonon scattering in Monte Carlo simulations of high k dielectric MOSFETs
J. R. BARKER and J.R. WATLING
J.Comput. Electron 5: 463-466 (2006).
(also published on line: 24th January 2007)

2006
Monte Carlo study of mobility in Si devices with HfO2 based oxides
G. FERRARI, J. R. WATLING, S. ROY, J. R. BARKER, P. ZEITZOFF, G. BERSUKER AND A. ASENOV,
Materials Science in Semiconductor Processing, 9: 995-999, (2006).

Development of a full 3D NEGF nan-CMOS simulator
A. MARTINEZ, J. R. BARKER, A. ASENOV, M. BESCOND, SVIZHENKO and A. ANANTRAM
Proc.SISPAD 2006 (IEEE) 353-356 (2006).

Hamming hypermeshes: high performance interconnection networks for pin-out limited systems
F. RODRIGUEZ-SALAZAR and J. R. BARKER
Performance Evaluation, 63 , 759-775 (2006).

Monte Carlo study of coupled SO phonon-plasmon scattering in Si MOSFETs with high k- dielectric gate stacks: hot electron and disorder effects
BARKER, J. R., WATLING, J.R., BROWN, A., ROY, S., ZEITZOFF, P., BERSUKER, G., AND ASENOV, A
Springer Proceedings in Physics, 110,  115-119 (2006)

A 2D-NEGF quantum transport study of unintentional charges in a 5nm-DG transistor
MARTINEZ, A., BARKER, J.R., SVIZHENKO, A., ANANTRAM, M.P., AND ASENOV, A.,
Springer Proceedings in Physics, 110, 125-128 (2006)

Atomistic scattering close to an interface
BARKER, J.R., AND WATLING, J.R.,
Journal of Physics Conf series 38, 204-207 (2006)

The impact of unintentional discrete charges in a nominally undoped channel of a thin body double gate MOSFET: classical to full quantum simulation,
MARTINEZ, A., BARKER , J.R., A. SVIZHENKO, A., ANANTRAM, M.P., BROWN, A.R., BIEGEL, B., AND ASENOV, A.
Journal of Physics Conf series 38, 192-195 (2006)

SO phonon scattering rates at the Si-HfO2 interface in Si MOSFETs
BARKER, J.R., WATLING, J.R., AND FERRARI, G.,
Journal of Physics Conf series 38, 184-187 (2006)

Green Function study of quantum transport In ultrasmall devices with embedded atomistic clusters
BARKER, J.R., MARTINEZ, A., SVIZHENKO, A., AANATRAM, M.P., AND ASENOV, A.,
J. Phys.: Conf. Ser. 35, 233-246 (2006).

A NEGF study of the effect of surface roughness on CMOS nanotransistors
MARTINEZ, A., SVIZHENKO, A., AANATRAM, M.P., BARKER, J.R., AND ASENOV, A.,
J. Phys.: Conf. Ser. 35, 269-274 (2006)

Non-equilibrium dielectric response of high-k gate stacks in Si MOSFETs: application to so interface phonon scattering
BARKER, J.R., AND WATLING, J.R.,
J. Phys.: Conf. Ser. 35, 255-268 (2006)

2005
A study of the effect of the interface roughness on a DG-MOSFET using a full 2D NEGF technique
A. MARTINEZ, A. SVIZHENKO, M.P. ANATRAM, J.R. BARKER, A.R. BROWN, A. ASENOV
The International Electronic Devices Meeting IEDM 2005, IEDM Technical Digest, San Francisco, December, 613-616 (2005).

Quantised Vortex Flows And Conductance Fluctuations In High Temperature Atomistic Silicon MOSFET Devices
J. R. BARKER
Physics of Semiconductor, ed J. Menedez and C.G. Van de Walle, AIP Press, 27 1493 (2005)

The impact of soft-optical phonon scattering due to high-k dielectrics on the performance of sub-100nm conventional and strained Si n-MOSFETs.
L. YANG, J. R. WATLING, J. R. BARKER AND A. ASENOV.
in Physics of Semiconductors, ed J. Menedez and C.G. Van de Walle,
AIP Conf Proc., Vol. 27, 1497 (2005)

Predicting current flow; quantum transport from atom to transistor,
J.R. BARKER,
Chemistry World, 2, (2005)

Simulations of sub-100nm strained silicon MOSFETs with high-k gate stacks
L. YANG, J.R. WATLING, R. WILKINS, M.BORICI, J.R. BARKER, A.ASENOV AND S.ROY
J.Computational Electronics, 4, 171-175 (2005).

Hilbert graph: an expandable interconnection for clusters
F.RODRIGUEZ-SALAZAR AND J.R. BARKER
J.Computational Electronics, 4, 145-8 (2005)

Impact of high-k dielectric (HfO2) on the mobility and device performance of sub-100nm nMOSFETs
J.R. WATLING, L. YANG, A.ASENOV, J.R. BARKER AND S.ROY
IEEE Transactions on Device and Materials Reliability, 5, 103-108 (2005)

Transport in the presence of high-k dielectrics.
WATLING, JR, ASENOV, A, BARKER, JR and ROY, S
In: Material Modelling International Workshop, London, UK (2005)

The impact of the interfacial layer and structure of the k dielectric (HfO2) on deviceperformance.
WATLING, JR, ASENOV, A, BARKER, JR andROY, S
In: Advanced Gate Stack Engineering Conference, Texas, USA(2005)

Electrostatic and transport variations in nano CMOS devices due to variations
in high-k oxides.
WATLING, JR, BROWN, AR, ALEXANDER, C, FERRARI, G, BARKER, JR, BERSUKER, G, ZEITZOFF, P and ASENOV, A
In: 2nd International Workshop on Advanced Gate Stack Technology,
Texas, USA(2005)

2004

Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks
L. YANG, J. R. WATLING, F. ADAMU-LEMA, A. ASENOV AND J. R. BARKER
IEEE Technical Digest Int. Electron Devices Meeting IEDM, 597-600 (2004).

Vortex flows in semiconductor device quantum channels: time-dependent simulation
J.R. BARKER AND A. MARTINEZ
J. Computational Electronics, 3, 401-405, (2004)

Smart dust: Monte Carlo simulation of self-organised transport.
J.R. BARKER AND A. BARMPOUTIS
J. Computational Electronics,3, 317-321, (2004)

Si/SiGe Heterostructure Parameters for Device Simulations
L YANG, J R. WATLING, R C. W. WILKINS, M BORICI, J R. BARKER, ASEN ASENOV AND SCOTT ROY
Semiconductor Science and Technology 19,1174-1182, (2004)

Linear Feedback Shift Register Interconnection Networks
F. RODRIGUEZ-SALAZAR, J. R. BARKER
in Proceedings of the 2004 Workshop on Massively Parallel Processing, at IPDPS 2004 (2004).

Reduced interface roughness in sub-100nm strained Si n-MOSFETs – A Monte Carlo simulation study,
YANG, J. R. WATLING, R. C. W. WILKINS, J. R. BARKER AND A. ASENOV,
Proceedings of the 5th Europe Workshop on Ultimate Integration of Silicon (ULIS04), p23-26, IMEC, (2004).

The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs
J. R. WATLING, L. YANG, M. BORICI, R. C. W. WILKINS, A. ASENOV, J. R. BARKER AND S. ROY. ,
Solid State Electronics 48, 1337-1346 (2004) (invited)

Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs
L. YANG, A. ASENOV, J. R. WATLING, M. BORICI, J. R. BARKER, S. ROY, K .ELGAID, I. THAYNE AND T. HACKBARTH. ,
Microelectronics Reliability 44, 1101-1107 (2004).

Non-equilibrium quantum transport in finite device structures in the presence of non-self-averaged atomistic impurity scattering
J. R. BARKER
Semiconductor Science and Technology, 19S, p56-59, (2004).

Interface roughness scattering and its impact on electrons transport in relaxed and strained Si n-MOSFETs,
M. BORICI, J. R. WATLING, R. C. W. WILKINS, L. YANG, J. R. BARKER and A. ASENOV,
Semiconductor Science and Technology, 19S, p155-157, (2004).

2003
A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions
J.R. BARKER
Physica E19, 62-70 (2003)

Green Function Simulation Study of Non Self-Averaging Scattering Processes in Atomistic Semiconductor Devices
J.R. BARKER
Journal of Computational Electronics 2, 153-161 (2003)

Quantum fluctuations in atomistic semiconductor devices
J. R. BARKER
Superlattices and Microstructures 34, 361-366 (2003).

Quantum hydrodynamics of normal vortices in open semiconductor quantum dots
J.R. BARKER
Physics of Semiconductors: Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh, 2002, Institute of Physics Conference Series 171, ed A R Long and J H Davies, Institute of Physics Publishing, Bristol (UK) and Philadelphia (USA), P231 (2003)

Bohm trajectories in quantum transport
J.R. BARKER
Chapter in “Progress in Nonequilibrium Green’s Functions II”, M. Bonitz and D. Semkat (eds.), World Scientific Publ., Singapore, 198-213 (2003)

Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs
L. YANG, J.R. WATLING, M. BORICI, R.C.W. WILKINS, A. ASENOV, J.R. BARKER, S. ROY
Journal of Computational Electronics 2, 363-368 (2003)

Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs
J.R. WATLING, L. YANG, M. BORICI, J.R. BARKER, A. ASENOV
Journal of Computational Electronics 2, 475-479 (2003)

A Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs
M. BORICI, J.R. WATLING, R. WILKINS, L. YANG, J.R. BARKER
Journal of Computational Electronics 2, 163-167 (2003)

Optimizations of sub-100nm Si/SiGe MODFETs for high linearity RF applications,
L. Yang, A. Asenov, M. Borici, J. R. Watling, J. R. Barker, A. Asenov, S. Roy, K .Elgaid, I. Thayne and T. Hackbarth.
Proceedings of the 2003 IEEE Conference on Electron Device and Solid-State Circuits (EDSSC03), p331-334, Hong Kong, 2003.

A simulation study of high linearity Si/SiGe HFETs,
L. Yang, A. Asenov, J. R. Watling, M. Borici, J. R. Barker, A. Asenov, S. Roy, K .Elgaid, I. Thayne and T. Hackbarth.
Proceedings of the 14th Workshop on Modelling and Simulation of Electron Device (MSED03), p41-44, Barcelona, 2003.

2002
Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach
J.R. BARKER AND J. R. WATLING
Microelectronic Engineering 63, 97-103 (2002)

Normal vortex states and their application in mesoscopic semiconductor devices
J.R. BARKER
Microelectronic Engineering 63, 223-231 (2002)

On the Completeness of Quantum Hydrodynamics: Vortex Formation and the Need for Both Vector and Scalar Quantum Potentials in Device Simulation
J.R. BARKER
Journal of Computational Electronics 1 17-21 (2002)

On the Current and Density Representation of Many-Body Quantum Transport Theory
J.R. BARKER
Journal of Computational Electronics 1 23-26 (2002)

The UK HMOS Silicon Germanium Programme
BARKER, J R; ASENOV, A; WHALL, T E; PARKER, E H C; WAITE A;EVANS, A G R; FOBELETS, K; CULLIS, T; O’NEILL, A and KEARNEY, M
http://eprints.soton.ac.uk/id/eprint/257811
The UK HMOS II Silicon Germanium Programme. Advanced Heterostructures Workshop, Hapuna Beach, Hawaii,(2002)

 

Quantum Potential Corrections for Spatially Dependent Effective Masses with Application to Charge Confinement at Heterostructure Interfaces
J.R. WATLING, J.R. BARKER, S. ROY
Journal of Computational Electronics 1 279-282 (2002)

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
M.J. PREST, M.J.PALMER, T.J.GRASBY, P.J.PHILLIPS, O.A. MIRONOV, E.H.C. PARKER, T.E.WHALL, A.M. WAITE, A.G.R. EVANS, J.R. WATLING, A.ASENOV, J.R. BARKER
Materials Science and Engineering B, Solid State Materials for Advanced Technology, B89, 444-448 (2002)>

Scaling Study of Si/SiGe MOSFETS for RF applications
L. YANG, J.R. WATLING, R.C.W. WILKINS, A.ASENOV, J.R.BARKER, S.ROY AND T.HACKBARTH
Proc. 10th int Conf Electron Devices for Microwave and Optoelectronic Devices, EDMO(2002) Manchester, (2002)

2001
Simulation of enhanced interface trapping due to carrier dynamics in warped valence bands in SiGe devices
J.R. BARKER & J R. WATLING
VLSI Design 13, 453-458 (2001)

J R. WATLING, J.R. BARKER & A. ASENOV
Soft Sphere Model for electron correlation and scattering in the atomistic modelling of semiconductor devices
VLSI Design 13, 441-446 (2001)

A simple model for the quantum hydrodynamic simulation of electron transport in quantum confined structures in the presence of vortices
J.R. BARKER
VLSI Design 13, 237-244 (2001)

A fast algorithm for the study of wavepacket scattering at disordered interfaces
J.R. BARKER, J.R. WATLING & R. WILKINS
VLSI Design 13, 199-204 (2001)

Non-equilibrium hole transport in deep sub micron well tempered Si p-MOSFETs
J.R. WATLING, Y.P ZHAO, A.ASENOV & J.R. BARKER,
VLSI Design 13, 169-173 (2001)

Enhanced Velocity Overshoot and Transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs – Predictions for Deep Submicron Devices
Palmer, M.J.; Braithwaite, G.; Prest, M.J.; Parker, E.H.C.; Whall, T.E.; Zhao, Y.P.; Kaya, S.; Watling, J.R.; Asenov, A.; Barker, J.R.; Waite, A.M.; Evans, A.G.R.
IEEE CONFERENCE PUBLICATIONS Proceeding of the 31st European Solid-State Device Research Conference (ESSDERC), 2001: 199 – 202  (2001)

 

 

Comments are closed.