2011-present

 

A phenomenological method to reduce NEGF simulation from 3D to 1D for lateral translation invariant systems
ANTONIO MARTINEZ and JOHN R BARKER
International Workshop on Computational Nanotechnology, Barcelona,
(2023)

Towards a semi-classical simulator for the energy distribution functions in optically excited hot carrier semiconductor devices
J. R. BARKER and A. M. MARTINEZ
International Workshop on Computational Nanotechnology, Barcelona,
(2023)

Quantum transport in a silicon nanowire FET transistor:
hot electrons and local power dissipation
ANTONIO MARTINEZ and JOHN R BARKER
Materials, 13 (15), 3326-3368 (2020)
published on-line at: https://doi.org/10.3390/ma13153326

DFT/NEGF study of discrete dopants in Si/III-V 3D FET
LUKE SAMUEL JOSEPH WILSON, JOHN REGINALD BARKER AND ANTONIO MARTINEZ
Journal of Physics : Condensed Matter,Volume 31, Number 14 (2019)
Published online at: https://doi.org/10.1088/1361-648X/aaffb2

Dissipative NEGF methodology to treat short range Coulomb interaction: Current through a 1D Nanostructure
ANTONIO MARTINEZ, JOHN R. BARKER and RICCARDO DI PIETRO
Journal of Physics : Condensed Matter Volume 30, Number 29,  294003 (2018),
Published online at:  https://doi.org/10.1088/1361-648X/aacc49

Image charge models for accurate construction of the electrostatic self-energy
of 3D layered nanostructure devices
JOHN BARKER and ANTONIO MARTINEZ
Journal of Physics : Condensed Matter, Volume 30, Number 13, 134002 (2018)
Published online at:  https://doi.org/10.1088/1361-648X/aaaf98

Dissipative NEGF methodology to treat short range Coulomb interaction: current through a 1D nanostructure
ANTONIO MARTINEZ, JOHN R. BARKER, RICCARDO Di PIETRO
International Workshop on Computational Nanotechnology
IOP Conference, Windermere UK (2017)
Book of Abstracts 48-49 (2017)

Image charge models for accurate construction of the electrostatic self-energy of 3D layered nanostructure devices
JOHN BARKER and ANTONIO MARTINEZ
International Workshop on Computational Nanotechnology
IOP Conference, Windermere UK (2017)
Book of Abstracts 111-113 (2017)

Impact of Phonon scattering in Si /GaAs /InGaAs Nanowires and FinFets: a NEGF perspective
ANTONIO MARTINEZ, ANNA PRICE, RAUL VALIN, MANUEL ALDEGUNDE AND JOHN BARKER
Journal of Computational Electronics,Volume 15, Issue 4, pp 1130–1147 (2016)
Review paper Published on line at http://link.springer.com/article/10.1007/s10825-016-0851-0

Current enhancement due to short-range Coulomb interaction in Quasi-open Systems
A. MARTINEZ, J.R. BARKER, R. PIETRO
Semiconductors UK 2016, Book of Abstracts (2016)

Impact of short range Coulomb repulsion on the current through a 1D nanostructure
ANTONIO MARTINEZ, JOHN R. BARKER, RICCARDO PIETRO
Euro-TMCS II: Theory, Modelling and Computational Methods for Semiconductors, Tyndall National Institute at University College, Cork, Republic of Ireland , 7-9 th December, 2016, Book of Abstracts.

Non-equilibrium Green’s functions study of discrete dopants
variability on an ultra-scaled FinFET
R. VALIN, A. MARTINEZ, and J. R. BARKER
Journal of Applied Physics, 117, 16405 (2015)

Study of Local Power Dissipation in Ultra-Scaled Silicon Nanowire FETs
ANTONIO MARTINEZ, JOHN R. BARKER, MANUEL ALDEGUNDE AND RAUL VALIN
IEEE Electron Device Letters, 36 2-4 (2015)

Impact of local exchange- correlation in a FinFet device with dopant clustering
A. MARTINEZ, R. VALIN and J. R. BARKER
Semiconductors UK 2015, Book of Abstracts (2015)

Impact of discrete dopants in ultra-scaled finfets and the effect of XC on dopant clustering
A. MARTINEZ, R. VALIN and J. R. BARKER
IEEE Conference Publication, Computational Electronics (IWCE), 2015 International Workshop: Year 2015
pages 1-4, DOI: 10.1109/IWCE.2015.7301974
IEEE Xplore

Quantum Transport of a Nanowire FET with Complex Phonon Self–Energy
R. VALIN, M. ALDEGUNDE, A. MARTINEZ, and J. R. BARKER
Journal of Applied Physics, 116, 084507 (2014)

Impact of Discrete Dopants on an Ultra-scaled
FinFET Using Quantum Transport Simulations
R. VALIN, A. MARTINEZ, and M. ALDEGUNDE, J. R. BARKER
Proceedings IEEE Solid State Devices Research Conference (ESSDERC) , 2014 44th European, Curran Associates, Inc. ( ISBN:9781479943753, Dec 2014 ), pp 345-348 (2014)
also on-line in IEEE Xplore.

Impact of Lateral Doping Profiles on Ultra-scaled Trigate FinFETs
RAUL VALIN, MANUEL ALDEGUNDE, ANTONIO MARTINEZ, and JOHN. R. BARKER
IEEE Proceedings of International Workshop on Computational Electronics
2014 International Workshop on Computational Electronics (IWCE 2014)
Curran Associates (ISBN:9781479954346), 218-220 (2014)
also on-line in IEEE Xplore

Remote soft-optical phonon scattering in Si nanowire FETs
JOHN. R. BARKER and A. MARTINEZ
IEEE Proceedings of International Workshop on Computational Electronics
2014 International Workshop on Computational Electronics (IWCE 2014)
Curran Associates (ISBN:9781479954346), 143-145 (2014)
Also on-line in IEEE Xplore DOI: 10.1109/IWCE.2014.6865851

Phonon scattering in an Ultra-scaled Trigate FET
A. MARTINEZ, R. VALIN, M. ALDEGUNDE and J. R. BARKER
Semiconductors UK 2014, Book of Abstracts (2014)

Causal self-energies for NEGF modelling of quantum nano wires
JOHN R. BARKER, ANTONIO MARTINEZ, MANUEL ALDEGUNDE AND RAUL VALIN
Journal of Physics: Conference Series 526 012001 (2014)

Impact of different electron-phonon scattering models on the electron
transport in a quantum wire
ANNA PRICE, ANTONIO MARTINEZ, RAUL VALIN AND JOHN BARKER
Journal of Physics: Conference Series 526, 012007 (2014)

Study of individual phonon scattering mechanisms and the validity
of Matthiessen’s rule in a gate-all-around silicon nanowire transistor
M. ALDEGUNDE, A. MARTINEZ and J. R. BARKER
Journal of Applied Physics, vol. 113, 014501 (2013)

Self-energy Models for Scattering in Semiconductor Nanoscale Devices: Causality Considerations and the Spectral Sum Rule
JOHN R BARKER, and ANTONIO MARTINEZ
Material Research Society Proceedings, MRS Online Proceedings Library, 1551, mrss13-1551-r10-25 doi:10.1557/opl.2013.898.(2013)

Causal self-energies for quantum nanowires
JOHN BARKER and ANTONIO MARTINEZ
UK Semiconductors 2013, Book of Abstracts (2013)

The non-equilibrium Green function approach to quantum transport in nano-structures
J.R. BARKER
Int. Workshop on Computational Electronics 16, (ed N. Mori and S. Selberherr, 2013 Society for Micro-and Nanoelectronics, Technische Univeritat Wien:ISBN 978-3-901578-26-7) 16 (2013)

Impact of Dielectric Induced Dynamical Many-body correlation effects on the transfer characteristic of a silicon nanowire transistor
A. MARTINEZ, J.R.BARKER and M. ALDEGUNDE
Int. Workshop on Computational Electronics 16, (ed N. Mori and S. Selberherr, 2013 Society for Micro-and Nanoelectronics, Technische Univeritat Wien:ISBN 978-3-901578-26-7) 50 (2013)

Impact of Scaling on the Variability of Multi-Gate Transistors
M. ALDEGUNDE, A. MARTINEZ and J.R.BARKER
Int. Workshop on Computational Electronics 16, (ed N. Mori and S. Selberherr, 2013 Society for Micro-and Nanoelectronics, Technische Univeritat Wien:ISBN 978-3-901578-26-7) 194 (2013)

Dependence of Matthieson’s Rule on Complex Phonon Self-Energies: a NEGF study
M. ALDEGUNDE, R. VALIN, A. MARTINEZ and J.R. BARKER
Int. Workshop on Computational Electronics 16, (ed N. Mori and S. Selberherr, 2013 Society for Micro-and Nanoelectronics, Technische Univeritat Wien:ISBN 978-3-901578-26-7) 220 (2013)

Study of Discrete Doping Induced Variability in Junctionless Nanowire MOSFETs using Dissipative Quantum Transport Simulations
M. ALDEGUNDE, A. MARTINEZ and J. R. BARKER
IEEE Electron Device Letters, Vol. 33, 194 (2012)

Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
MARTINEZ, A.; ALDEGUNDE, M.; KALNA, K.; BARKER, J. R.
IEEE Publication: Proceedings 15th International Workshop on ComputationalElectronics (2102)
IEEE Catalog Number: CFP12462-PRT (ISBN: 978-1-4673-0705-5), pp 102-105 (2012)

Compliant energy and momentum conservation in NEGF simulation of electron-phonon scatteringin semiconductor nano-wire transistors
J R BARKER, A MARTINEZ and M ALDEGUNDE
Journal of Physics: Conference Series, Vol. 367, 012012 (2012)

Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
MARTINEZ, A.; ALDEGUNDE, M.; KALNA, K.; BARKER, J. R.
Computational Electronics (IWCE), 2012 15th International Workshop on
Digital Object Identifier: 10.1109/IWCE.2012.6242845
pp 1 – 4 (2012)

Quantum transport study on the impact of Channel Length and Cross-section on Variability induced by Random Discrete Dopants in narrow gate-all-around Silicon Nanowire Transistors,
A. MARTINEZ, N. SEOANE, M. ALDEGUNDE, A. R. BROWN,
J. R. BARKER and A. ASENOV
IEEE Transactions on Electron Devices, Vol. 58, 2209-2217 (2011).

Conceptual issues, practicalities and applications of Bohmian and other quantum trajectories in nanoelectronics
J. R. BARKER
in Quantum Trajectories edited by Keith H. Hughes and Gerard Parlant, published by Collaborative Computational Project on Molecular Quantum Dynamics (CCP6), Daresbury Laboratory, Daresbury, Warrington, UK; ISBN 978-0-9545289-9-7;pages
43-48 (2011).

Remotely screened electron-impurity scattering model for nanoscale MOSFET
E. TOWIE, J.R. WATLING and J.R. BARKER
Semiconductor Science and Technology, Vol. 26, No.5, 055008 (2011).

Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants
MARTINEZ, M. ALDEGUNDE, N. SEOANE, A. R. BROWN, J. R. BARKER, A. ASENOV
IEEE Colloquium on Humanities, Science and Engineering Research (CHUSER 2011), Dec 5-6, 2011, Penang (2011)

The Non-Equilibrium Green Function approach as a TCAD tool for future CMOS technology
A. MARTINEZ, N. SEONE, M. ALDEGUNDE, A. ASENOV and J.R. BARKER
2011 International Conference on Simulation of Semiconductor Processes and Devices, Osaka, Japan, 8-10 September, 2011 Proc. SISPAD 2011, pages 95-98 IEEE Cat. No. (2011).

 

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